Publications

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ResearchGate: Profile
  1. Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells
    H. Teisseyre, A. Kaminska, S. Birner, T. D. Young, A. Suchocki, A. Kozanecki
    Journal of Applied Physics 119, 215702 (2016)
     
  2. Electronic properties of dislocations
    M. Reiche, M. Kittler, H. Uebensee, E. Pippel, A. Haehnel, S. Birner
    Applied Physics A 122, 389 (2016)
     
  3. Efficient Method for the Calculation of Dissipative Quantum Transport in Quantum Cascade Lasers
    P. Greck, S. Birner, B. Huber, P. Vogl
    Optics Express 23, pp. 6587-6600 (2015)
     
  4. Nanowires enabling strained photovoltaics
    J. Greil, S. Birner, E. Bertagnolli, A. Lugstein
    Applied Physics Letters 104, 163901 (2014)
     
  5. A theoretical analysis of the optical absorption properties in one-dimensional InAs/GaAs quantum dot superlattices
    T. Kotani, S. Birner, P. Lugli, C. Hamaguchi
    Journal of Applied Physics 115, 143501 (2014)
     
  6. Negative quantum capacitance in graphene nanoribbons with lateral gates
    R. Reiter, U. Derra, S. Birner, B. Terrés, F. Libisch, J. Burgdörfer, C. Stampfer
    Physical Review B 89, 115406 (2014)
     
  7. The Multi-band k.p Hamiltonian for Heterostructures: Parameters and Applications
    S. Birner
    In: Multi-Band Effective Mass Approximations, M. Ehrhardt, T. Koprucki (Eds.), Lecture Notes in Computational Science and Engineering 94 (Advanced Mathematical Models and Numerical Techniques), pp. 193-244 (Chapter 6), Springer, Heidelberg (2014)
     
  8. Driving Perpendicular Heat Flow: (p×n)-Type Transverse Thermoelectrics for Microscale and Cryogenic Peltier Cooling
    Chuanle Zhou, S. Birner, Yang Tang, K. Heinselman, M. Grayson
    Physical Review Letters 110, 227701 (2013)

    see also:
    Focus: A New Direction for Thermoelectric Cooling
    Materials in which heat flows perpendicular to an electric current could lead to better devices for cooling electronics.
    Physics Focus 6, 63 (2013)
     
  9. Improvement of QDIP performance due to quantum dots with built-in charge
    V. Mitin, A. Sergeev, N. Vagidov, S. Birner
    Infrared Physics & Technology 59, 84 (2013)
     
  10. Modeling of semiconductor nanostructures and semiconductor–electrolyte interfaces
    S. Birner
    Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 135,
    Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 239 pp. (2011)
    ISBN 978-3-941650-35-0, 18 €
    PhD thesis
    Online publication at mediaTUM - Dokumenten- und Publikationsserver der Technischen Universität München
     
  11. Hydrophobic Interaction and Charge Accumulation at the Diamond-Electrolyte Interface
    M. Dankerl, A. Lippert, S. Birner, E.U. Stützel, M. Stutzmann, J.A. Garrido
    Physical Review Letters 106, 196103 (2011)
     
  12. Valley degeneracy in biaxially strained aluminum arsenide quantum wells
    S. Prabhu-Gaunkar, S. Birner, S. Dasgupta, C. Knaak, M. Grayson
    Physical Review B 84, 125319 (2011)
     
  13. Electron heating in quantum-dot structures with collective potential barriers
    L.H. Chien, A. Sergeev, N. Vagidov, V. Mitin, S. Birner
    International Journal of High Speed Electronics and Systems 20, 143 (2011)
     
  14. InAs/GaSb Type II Superlattices as Low-Temperature Thermoelectrics
    C. Zhou, S. Birner, M. Norko, Y. Tang, M. Grayson
    AIP Conf. Proc. 1416, 142 (2011)
    Proceedings of the 15th International Conference on Narrow Gap Systems (NGS15), Blacksburg, VA, USA (2011)
     
  15. Graphene Solution-Gated Field-Effect Transistor Array for Sensing Applications
    M. Dankerl, M. Hauf, A. Lippert, L. Hess, S. Birner, I. D. Sharp, A. Mahmood, P. Mallet, J. Y. Veuillen, M. Stutzmann, J. A. Garrido
    Advanced Functional Materials 20, 3117 (2010)
     
  16. Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation
    O. Moshe, D. H. Rich, S. Birner, M. Povolotskyi, B. Damilano, J. Massies
    Journal of Applied Physics 108, 083510 (2010)
     
  17. Ballistic quantum transport using the contact block reduction (CBR) method - An introduction (invited review article)
    S. Birner, C. Schindler, P. Greck, M. Sabathil, P. Vogl
    Journal of Computational Electronics 8 (3), 267-286 (2009)
    DOI 10.1007/s10825-009-0293-z
    Erratum: In eq. (61) (p. 279) there is a factor of 1/2 in front of the square root which should not be there. All results and conclusions presented in the paper are unaffected.
     
  18. GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
    P.K. Kandaswamy, F. Guillot, E. Bellet-Amalric, E. Monroy, L. Nevou, M. Tchernycheva, A. Michon, F.H. Julien, E. Baumann, F.R. Giorgetta, D. Hofstetter, T. Remmele, M. Albrecht, S. Birner, Le Si Dang
    Journal of Applied Physics 104, 093501 (2008)
     
  19. Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass
    S. Dasgupta, S. Birner, C. Knaak, M. Bichler, A. Fontcuberta i Morral, G. Abstreiter, M. Grayson
    Applied Physics Letters 93, 132102 (2008)
     
  20. Theoretical model for the detection of charged proteins with a silicon-on-insulator sensor
    S. Birner, C. Uhl, M. Bayer, P. Vogl
    J. Phys.: Conf. Ser. 107, 012002 (2008)
     
  21. Simulation of quantum cascade lasers - optimizing laser performance
    S. Birner, T. Kubis, P. Vogl
    Photonik international 2, 60 (2008)
     
  22. Simulation zur Optimierung von Quantenkaskadenlasern
    S. Birner, T. Kubis, P. Vogl
    Photonik 1, 44 (2008)
     
  23. Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration
    M. Brehm, T. Suzuki, Z. Zhong, T. Fromherz, J. Stangl, G. Hesser, S. Birner, F. Schäffler, G. Bauer
    Microelectronics Journal 39, 485 (2008)
     
  24. GaN quantum dots as optical transducers in field effect chemical sensors
    O. Weidemann, G. Jegert, S. Birner, M. Stutzmann, M. Eickhoff, E. Monroy
    2007 IEEE SENSORS 1-3, 1175 (2007)
    Proceedings of the 6th IEEE Sensors Conference, Atlanta, GA
     
  25. Three-Dimensional Si/Ge Quantum Dot Crystals
    D. Grützmacher, T. Fromherz, C. Dais, J. Stangl, E. Müller, Y. Ekinci, H.H. Solak, H. Sigg, R.T. Lechner, E. Wintersberger, S. Birner, V. Holư, G. Bauer
    Nano Letters 7 (10), 3150 (2007)
     
  26. nextnano: General Purpose 3-D Simulations
    S. Birner, T. Zibold, T. Andlauer, T. Kubis, M. Sabathil, A. Trellakis, P. Vogl
    IEEE Transactions on Electron Devices 54 (9), 2137 (2007)
     
  27. Two-photon excitation of asymmetric GaN/AlGaN quantum discs
    K. H. Lee, J. H. Na, S. Birner, S. N. Yi, R. A. Taylor, Y. S. Park, C. M. Park, T. W. Kang
    AIP Conf. Proc. 893, 981 (2007)
    Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria (2006)
     
  28. Characterization of tunneling and free-carrier screening in coupled asymmetric GaN/AlGaN quantum discs
    K. H. Lee, J. H. Na, S. Birner, S. N. Yi, R. A. Taylor, Y. S. Park, C. M. Park, T. W. Kang
    AIP Conf. Proc. 893, 1003 (2007)
    Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria (2006)
     
  29. The 3D nanometer device project nextnano: Concepts, methods, results
    A. Trellakis, T. Zibold, T. Andlauer, S. Birner, R. K. Smith, R. Morschl, P. Vogl
    Journal of Computational Electronics 5 (4), 285 (2006)
     
  30. Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs
    K.H. Lee, S. Birner, J.H. Na, R.A. Taylor, S.N. Yi, Y.S. Park, C.M. Park, T.W. Kang
    Nanotechnology 17, 5754 (2006)
     
  31. Modeling of semiconductor nanostructures with nextnano³
    S. Birner, S. Hackenbuchner, M. Sabathil, G. Zandler, J.A. Majewski, T. Andlauer, T. Zibold, R. Morschl, A. Trellakis, P. Vogl
    Acta Physica Polonica A 110 (2), 111 (2006)
     
  32. Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AlGaN quantum discs
    K.H. Lee, J.H. Na, R.A. Taylor, S.N. Yi, S. Birner, Y.S. Park, C.M. Park, T.W. Kang
    Applied Physics Letters 89, 023103 (2006)
     
  33. Free carrier screening in coupled asymmetric GaN quantum discs
    K. H. Lee, J. H. Na, S. Birner, R. A. Taylor, S. N. Yi, Y. S. Park, C. M. Park, T. W. Kang
    SPIE Proceedings 6352, U288-U296 (2006)
    Proceedings of the Conference on Optoelectronic Materials and Devices, Gwangju, South Korea
     
  34. Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for InxGa1-xAs and InxGa1-xAs1-yNy quantum wells
    M. Galluppi, L. Geelhaar, H. Riechert, M. Hetterich, A. Grau, S. Birner, W. Stolz
    Physical Review B 72, 155324 (2005)
     
  35. Modeling of Purely Strain-Induced CEO GaAs/In0.16Al0.84As Quantum Wires
    S. Birner, R. Schuster, M. Povolotskyi, P. Vogl
    Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 1 (2005)
     
  36. Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer
    O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S.K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, H. Riechert
    Virtual Journal of Nanoscale Science Technology 12 (1) (2005) &
    Physical Review B 71, 245316 (2005)
     
  37. Modeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers
    K.H. Lee, S. Birner, J.H. Na, R.A. Taylor, J.W. Robinson, J.H. Rice, Y.S. Park, C.M. Park, T.W. Kang
    Proceedings of 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 547 (2005)
     
  38. Purely strain induced GaAs/InAlAs single quantum wires exhibiting strong charge carrier confinement
    R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, D. Schuh, M. Bichler, S. Birner, P. Vogl, G. Abstreiter
    AIP Conf. Proc. 772, 898 (2005)
    Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff, USA (2004)
     
  39. Advances in the theory of electronic structure of semiconductors
    J.A. Majewski, S. Birner, A. Trellakis, M. Sabathil, P. Vogl
    physica status solidi (c) 1 (8), 2003 (2004)
     
  40. Optical properties of low-dimensional semiconductor systems fabricated by cleaved edge overgrowth
    R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, G. Schedelbeck, S. Sedlmaier, M. Stopa, S. Birner, P. Vogl, J. Bauer, D. Schuh, M. Bichler, G. Abstreiter
    physica status solidi (c) 1 (8), 2028 (2004)
     
  41. Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces
    M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, S. Birner, P. Vogl, D. Alderighi, M. Gurioli, A. Vinattieri, M. Colocci, S. Sanguinetti, R. Nötzel
    Semiconductor Science and Technology 19, S351 (2004)
     
  42. Electronic and optical properties of [N11] grown nanostructures
    M. Povolotskyi, A. Di Carlo, S. Birner
    physica status solidi (c) 1 (6), 1511 (2004)
     
  43. Tuning the Piezoelectric Fields in Quantum Dots: Microscopic Description of Dots Grown on (N11) Surfaces
    M. Povolotskyi, A. Di Carlo, P. Lugli, S. Birner, P. Vogl
    IEEE Transactions on Nanotechnology 3 (1), 124 (2004)
     
  44. Two-dimensional quantum-mechanical modeling for strained silicon channels of double-gate MOSFETs
    K. Kim, O. Kwon, J. Seo, T. Won, S. Birner, R. Oberhuber, A. Trellakis
    Journal of the Korean Physical Society 45, S909-S913 (2004)
     
  45. Two-dimensional quantum effects and structural optimization of FinFETs with two-dimensional Poisson-Schrödinger solver
    K. Kim, O. Kwon, J. Seo, T. Won, S. Birner, A. Trellakis
    Journal of the Korean Physical Society 45 (5), 1384-1390 (2004)
     
  46. nextnano³ - Software für neuartige Nano Devices
    S. Birner
    TUM Mitteilungen 2 - 03/04, Technische Universität München, 36 (2003)
     
  47. Microscopic description of nanostructures grown on (N11) surfaces
    M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, S. Birner, P. Vogl
    Journal of Computational Electronics 2, 275 (2003)
     
  48. Efficient computational method for ballistic currents and application to single quantum dots
    M. Sabathil, S. Birner, D. Mamaluy, P. Vogl
    Journal of Computational Electronics 2, 269 (2003)
     
  49. Theory of vertical and lateral Stark shifts of excitons in InGaAs quantum dots
    M. Sabathil, S. Hackenbuchner, S. Birner, J.A. Majewski, P. Vogl, J.J. Finley
    physica status solidi (c) 0 (4), 1181 (2003)
     
  50. Accelerated dynamics simulations of interstitial-cluster growth
    S. Birner, J. Kim, D.A. Richie, J.W. Wilkins, A.F. Voter, T. Lenosky
    Solid State Communications 120 (7-8), 279 (2001)
     
  51. Thermodynamic processes of Si-interstitial clusters
    J. Kim, S. Birner, D.A. Richie, J.W. Wilkins, A.F. Voter
    Computational Nanoscience 2001, 117 (2001)
     
  52. Theory of interstitial aggregates in germanium
    S. Birner, J.P. Goss, R. Jones, P.R. Briddon, S. Öberg
    Proceedings of the 2nd ENDEASD (European Network on Defect Engineering of Advanced Semiconductor Devices) Workshop, Kista, Sweden (2000)
     

Articles for the "Annual Report of the Walter Schottky Institute, Technische Universität München"
  1. The influence of lateral gates on the quantum capacitance of graphene
    S. Birner, R. Reiter, U. Derra, C. Stampfer
    Annual Report 2012, Walter Schottky Institute, Technische Universität München, 60 (2012)
     
  2. Diamond–electrolyte interfaces: The role of hydrophobicity
    S. Birner, M. Dankerl, J. A. Garrido, P. Vogl
    Annual Report 2011, Walter Schottky Institute, Technische Universität München, 46 (2012)
     
  3. Valley degeneracy in biaxially strained AlAs quantum wells
    S. Birner, S. Prabhu-Gaunkar, S. Dasgupta, C. Knaak, M. Grayson
    Annual Report 2010, Walter Schottky Institute, Technische Universität München, 28 (2011)
     
  4. Graphene biosensors: Modeling the hydrophobic graphene/electrolyte interface
    S. Birner, A. Lippert, M. Dankerl, J. A. Garrido, N. Schwierz, R. R. Netz, P. Vogl
    Annual Report 2009, Walter Schottky Institute, Technische Universität München, 86 (2010)
     
  5. Theoretical model for the detection of charged proteins with a silicon-on-insulator sensor
    S. Birner, P. Vogl
    Annual Report 2008, Walter Schottky Institute, Technische Universität München, 76 (2009)
     
  6. Qubit manipulation: Coupled quantum wires in a magnetic field
    S. Birner, P. Vogl
    Annual Report 2007, Walter Schottky Institute, Technische Universität München, 10 (2008)
     
  7. Modeling the optical properties of nitride nanostructures – InGaN quantum dots and coupled asymmetric GaN/AlGaN quantum discs
    S. Birner, K.H. Lee
    Annual Report 2006, Walter Schottky Institute, Technische Universität München, 22 (2007)
     
  8. The 3D nanometer device simulation project nextnano++
    A. Trellakis, T. Zibold, T. Andlauer, S. Birner, R. Morschl, P. Vogl
    Annual Report 2005, Walter Schottky Institute, Technische Universität München, 64 (2006)
     
  9. Effects of strain and confinement on the emission wavelength of InGaAs quantum dots due to a GaAsN capping layer
    S. Birner, O. Schumann, L. Geelhaar, H. Riechert
    Annual Report 2004, Walter Schottky Institute, Technische Universität München, 24 (2005)
     
  10. Modeling of purely strain-induced GaAs/InAlAs quantum wires
    S. Birner, R. Schuster, W. Wegscheider
    Annual Report 2004, Walter Schottky Institute, Technische Universität München, 26 (2005)
     
  11. Theoretical study of pH response of electrolyte AlGaN/GaN ion sensors
    M. Bayer, C. Uhl, S. Birner, P. Vogl
    Annual Report 2004, Walter Schottky Institute, Technische Universität München, 48 (2005)
     
  12. Tuning the piezoelectric fields in quantum dots: Electronic and optical properties of [N11] grown nanostructures
    S. Birner, M. Povolotskyi, A. Di Carlo, P. Vogl
    Annual Report 2003, Walter Schottky Institute, Technische Universität München, 2 (2004)
     
  13. WSI successful with nextnano³ business plan – software for novel nano devices
    S. Birner
    Annual Report 2003, Walter Schottky Institute, Technische Universität München, 82 (2004)
     
  14. Theory of vertical and lateral Stark shifts of excitons in quantum dots
    M. Sabathil, S. Hackenbuchner, S. Birner, J.A. Majewski, P. Vogl, J.J. Finley
    Annual Report 2002, Walter Schottky Institute, Technische Universität München, 20 (2003)
     
  15. nextnano³ – a state-of-the-art simulation tool for 3D quantum nanodevices
    S. Birner, S. Hackenbuchner, J.A. Majewski, D. Mamaluy, M. Sabathil, G. Zandler
    Annual Report 2001, Walter Schottky Institute, Technische Universität München, 78 (2002)
     
  16. Theoretical modeling of single quantum dot photodiodes
    M. Sabathil, S. Hackenbuchner, S. Birner, D. Mamaluy,  J.A. Majewski
    Annual Report 2001, Walter Schottky Institute, Technische Universität München, 46 (2002)
     
  17. Interstitial clusters in Si
    S. Birner, J. Kim, D.A. Richie, J.W. Wilkins, A.F. Voter
    Annual Report 2000, Walter Schottky Institute, Technische Universität München, 50 (2001)
     
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